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1. product pro?le 1.1 general description n-channel enhancement mode power field-effect transistor (fet) in a plastic package using nxp high-performance automotive (hpa) trenchmos technology, featuring very low on-state resistance, internal gate resistor, electrostatic discharge (esd) protection diodes and clamping diodes that are guaranteed to prevent mosfet avalanching. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information BUK7L3R3-34BRC n-channel trenchplus standard level fet rev. 02 26 september 2007 product data sheet n internal gate resistor n q101 compliant n 175 c rated n esd and overvoltage protection n automotive systems n general purpose power switching n motors, lamps and solenoids n 12 v loads n e ds(al)s 1.9 j n r dson = 2.9 m w (typ) n i d 75 a n p tot 298 w table 1. pinning pin description simpli?ed outline symbol 1 gate (g) sot78c (to-220) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) 3 2 mb 1 g d s sym094
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 2 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 3. ordering information table 2. ordering information type number package name description version BUK7L3R3-34BRC to-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads sot78c
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 3 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 4. limiting values [1] voltage is limited by clamping. [2] current is limited by power dissipation chip rating. [3] continuous current is limited by package. [4] refer to literature 9397 750 12572 for further information. [5] maximum value not quoted. refer to application note an10273 for further information. a) repetitive rating de?ned in figure 14 . b) single-pulse avalanche rating limited by a t j(max) of 175 c. c) repetitive avalanche rating limited by an average junction temperature of 170 c. table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage [1] -34v v dgr drain-gate voltage (dc) r gs =20k w [1] -34v v gs gate-source voltage - 20 v i d drain current t mb =25 c; v gs = 10 v; see figure 2 and 3 [2] - 218 a [3] [4] -75a t mb = 100 c; v gs = 10 v; see figure 2 [3] -75a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; see figure 3 - 872 a p tot total power dissipation t mb =25 c; see figure 1 - 298 w i dg(cl) drain-gate clamping current t p = 5 ms; d = 0.01 - 50 ma i gs(cl) gate-source clamping current continuous - 10 ma t p = 5 ms; d = 0.01 - 50 ma t stg storage temperature - 55 +175 c t j junction temperature - 55 +175 c source-drain diode i dr reverse drain current t mb =25 c [2] - 218 a [3] [4] -75a i drm peak reverse drain current t mb =25 c; pulsed; t p 10 m s - 872 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d =75a; v ds 34 v; r gs =50 w ;v gs = 10 v; starting at t j =25 c - 1.9 j e ds(al)r repetitive drain-source avalanche energy [5] --j v esd electrostatic discharge voltage all pins; human body model; r = 1.5 k w c = 100 pf - 8 kv c = 250 pf - 8 kv
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 4 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet v gs 3 10 v (1) capped at 75 a due to package fig 1. normalized total power dissipation as a function of mounting base temperature fig 2. continuous drain current as a function of mounting base temperature t mb =25 c; i dm is single pulse (1) capped at 75 a due to package fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03aa16 0 40 80 120 0 50 100 150 200 t mb ( c) p der (%) 003aaa861 0 50 100 150 200 250 0 50 100 150 200 t mb ( c) i d (a) (1) p der p tot p tot 25 c () ----------------------- - 100 % = 003aaa862 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms limit r dson = v ds / i d 1 ms t p = 10 m s 100 m s (1)
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 5 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 5. thermal characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient - 60 - k/w r th(j-mb) thermal resistance from junction to mounting base - - 0.5 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 003aaa863 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) d = 0.5 0.02 single shot 0.05 0.1 0.2 t p t p t t p t d =
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 6 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 6. characteristics table 5. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dg drain-gate breakdown voltage i d = 2 ma; v gs =0v t j =25 c 34 - 45 v t j = - 55 c 34 - 45 v v ds(cl) drain-source clamping voltage i gd(cl) = - 2 ma; i d = 1 a; see figure 17 and 18 -41-v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; see figure 9 and 10 t j =25 c 234v t j = 175 c 1--v t j = - 55 c - - 4.4 v i dss drain leakage current v ds =16v; v gs =0v t j =25 c - 0.1 0.6 m a t j = 150 c-550 m a t j = 175 c - 30 250 m a v (br)gss gate-source breakdown voltage i g = 1 ma; - 55 c < t j < +175 c 2022- v i gss gate leakage current v gs = 10 v; v ds =0v t j =25 c - 5 1000 na t j = 175 c --50 m a v gs = 16 v; v ds =0v t j = 175 c - - 150 m a r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; see figure 7 and 8 t j =25 c [1] - 2.9 3.3 m w t j = 175 c - - 6.3 m w r g gate resistance - 11 - w
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 7 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet [1] r dson measured at 1.5 mm away from the plastic body. dynamic characteristics q g(tot) total gate charge i d = 25 a; v ds =27v; v gs =10v; see figure 12 - 109 - nc q gs gate-source charge - 22 - nc q gd gate-drain charge - 55 - nc c iss input capacitance v gs =0v; v ds = 25 v; f = 1 mhz; see figure 16 - 5050 6730 pf c oss output capacitance - 1300 1560 pf c rss reverse transfer capacitance - 510 690 pf t d(on) turn-on delay time v ds =30v; r l = 1.2 w ; v gs =10v;r g =10 w -69-ns t r rise time - 150 - ns t d(off) turn-off delay time - 290 - ns t f fall time - 210 - ns l d internal drain inductance measure from drain lead 6 mm from package to center of die - 4.5 - nh measure from contact screw on mounting base to center of die - 3.5 - nh l s internal source inductance measure from source lead from package to source bonding pad - 7.5 - nh source-drain diode v sd source-drain voltage i s = 25 a; v gs = 0 v; see figure 13 - 0.85 1.2 v t rr reverse recovery time i s = 20 a; di s /dt = - 100 a/ m s; v gs =0v;v r =30v -93-ns q r recovered charge - 65 - nc table 5. characteristics continued t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit t j =25 ct j =25 c; i d =25a fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values 003aaa869 0 50 100 150 200 250 300 0246810 v ds (v) i d (a) v gs (v) = 4.5 5 10 9 8 7 6.5 6 20 003aaa870 2 3 4 5 6 0 5 10 15 20 v gs (v) r dson (m w )
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 8 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet t j =25 c fig 7. drain-source on-state resistance as a function of drain current; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature i d = 1 ma; v ds =v gs t j =25 c; v ds =v gs fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage 003aaa873 2 4 6 8 10 0 40 80 120 160 200 i d (a) r dson (m w ) v gs (v) = 10 8 5.5 6 7 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 t j ( c) a a r dson r dson 25 c () ----------------------------- - = t j ( c) - 60 180 120 060 03aa32 2 3 1 4 5 v gs(th) (v) 0 max typ min 03aa35 v gs (v) 06 4 2 10 - 4 10 - 5 10 - 2 10 - 3 10 - 1 i d (a) 10 - 6 min typ max
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 9 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet v ds = 25 v t j =25 c; i d =25a fig 11. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 12. gate-source voltage as a function of gate charge; typical values v gs = 0 v see t ab le note 5 of t ab le 3 limiting v alues . (1) single-pulse; t j =25 c (2) single-pulse; t j = 150 c (3) repetitive fig 13. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values fig 14. single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 003aaa876 0 20 40 60 80 100 0246 v gs (v) i d (a) t j = 175 c t j = 25 c 003aaa877 0 2 4 6 8 10 0 50 100 150 q g (nc) v gs (v) v ds = 14 v v ds = 27 v 003aaa878 0 20 40 60 80 100 0.0 0.2 0.4 0.6 0.8 1.0 v sd (v) i s (a) t j = 175 c t j = 25 c 003aaa868 10 -1 1 10 10 2 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) (3)
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 10 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet t j =25 c; v ds =25v v gs = 0 v; f = 1 mhz fig 15. forward transconductance as a function of drain current; typical values fig 16. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values i gd(cl) = - 2 ma i d = 10 a fig 17. drain-source clamping voltage as a function of drain current; typical values fig 18. drain-source clamping voltage as a function of gate-drain clamping current; typical values 003aaa875 0 20 40 60 80 100 0204060 i d (a) g fs (s) 003aaa874 0 2000 4000 6000 8000 10 -1 1 10 10 2 v ds (v) c (pf) c iss c rss c oss 003aaa727 39 40 41 42 43 0246810 i d (a) v ds(cl) (v) t j = 175 c t j = 25 c t j = -55 c 003aac051 36 38 40 42 44 -3 -2 -1 0 i gd(cl) (ma) v ds(cl) (v) t j = 175 c t j = 25 c t j = -55 c
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 11 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 7. package outline fig 19. package outline sot78c (to-220) references outline version european projection issue date iec jedec jeita sot78c 3-lead to-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads sot78c dimensions (mm are the original dimensions) notes 1. terminals in this zone are not tinned. unit a 1 b 1 d 1 e p mm q q a b d c l 1 3.90 3.78 14.00 13.50 6.10 5.58 5.16 5.00 2.95 2.69 q 1 3.80 3.42 q 2 12.40 12.00 2.72 2.40 0.44 0.33 15.07 14.80 0.87 0.76 1.33 1.21 4.58 4.31 1.33 1.21 6.47 6.22 10.40 10.00 2.64 2.44 e 1 6.03 5.76 h e l 01-12-11 03-01-21 d d 1 q 2 q q 1 p l 123 b 1 e e 1 h b 0 5 10 mm scale a e a 1 c q l 1 mounting base
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 12 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 8. revision history table 6. revision history document id release date data sheet status change notice supersedes BUK7L3R3-34BRC_2 20070926 product data sheet - BUK7L3R3-34BRC_1 modi?cations: ? t ab le 5 : updated maximum value of drain leakage current ? t ab le 5 : added t ab le note 1 BUK7L3R3-34BRC_1 20070515 product data sheet - -
BUK7L3R3-34BRC_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 26 september 2007 13 of 14 nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 9.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. trenchmos is a trademark of nxp b.v. 10. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BUK7L3R3-34BRC n-channel trenchplus standard level fet ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 26 september 2007 document identifier: BUK7L3R3-34BRC_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 11. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 9 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 9.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 10 contact information. . . . . . . . . . . . . . . . . . . . . 13 11 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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